Abstract
The effects of doping MAPbI3 into p-n homojunction under ITO/NiO/CH3NH3PbI3/ZnO/Al, ITO/Si/CH3NH3PbI3/ZnO/Al and ITO/Spiro-OMeTAD/CH3NH3PbI3/ZnO/Al perovskite solar cells are analyzed here. Photoelectric performance of solar cells fluctuates complicatedly as the result of the comprehensive effect of the material properties, energy levels, scales and other parameters of each functional layer, although such structured MAPbI3 was reported significantly improving cell's efficiency under the structure of TiO2/MAPbI3/Spiro-OMeTAD. The results show that by doping MAPbI3 into p-n homojunction, the best efficiency of the device with NiO as the hole transport layer increases from 17.432% to 19.101%, and the open-circuit voltage VOC increases from 1.016V to 1.093V. Theoretical calculation of the electric field and recombination rate inside the devices shows that all these three types of solar cells with perovskite p-n homojunction produce a strong built-in electric field, which promotes the separation and transmission of photogenerated carriers. The perovskite p-n homojunction causes the energy band to bend, enhances the built-in potential, and promotes the increase of the open circuit voltage of the device, which is beneficial to the performance of perovskite solar cells.
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