Abstract
Processes of defect formation in Si3N4 by the Schottky, Frenkel, and anti-Frenkel mechanisms are analyzed theoretically within the method of quasichemical approximation. Equations describing the formation of defects in Si3N4 are derived, analyzed, and solved for different conditions of electroneutrality, and dependences of the number density of point defects in Si3N4 on the partial pressure of nitrogen under equilibrium conditions are determined. It is assumed that nitrogen vacancies are the predominant kind of point defect of nonstoichiometric origin.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
