Abstract
Processes of defect formation in Si3N4 by the Schottky, Frenkel, and anti-Frenkel mechanisms are analyzed theoretically within the method of quasichemical approximation. Equations describing the formation of defects in Si3N4 are derived, analyzed, and solved for different conditions of electroneutrality, and dependences of the number density of point defects in Si3N4 on the partial pressure of nitrogen under equilibrium conditions are determined. It is assumed that nitrogen vacancies are the predominant kind of point defect of nonstoichiometric origin.
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