Abstract
Static characteristics of amorphous-silicon field-effect transistors have been analyzed under the assumption that the localized state density distribution (LSDD) in amorphous-silicon with respect to energy takes on an exponential or uniform form. In the case of an exponential LSDD, logarithmic drain current ID vs logarithmic gate voltage VG characteristics of the FET for large VG is found to be linear, the slope of which yields the characteristic temperature of the exponential LSDD. While, in the case of a uniform LSDD, log (IDVG)–VG curves for large VG are found to be linear. The experimental data is qualitatively in good agreement with the theoretical results of the exponential LSDD.
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