Abstract
The theoretical studies on acoustoelectrical (AE) sensitivity in SAW gas sensors with a single and bi-layer structures were presented. The analysis was based on normalized parameter ξ=σs/v0Cs (where: σs − is the film’s electrical surface conductivity, v0–SAW velocity, Cs − sum of the substrate’s and environment’s electrical permittivities) which determines the value of AE sensitivity and elemental theory of SAW interactions with semiconductor sensor thin film nanostructures. The electrical surface conductivities in the bi-layer structure are correlated by the σs1=x σs2 dependence, where the x parameter determines how much the electrical conductivity of the first film is bigger than the second one. The investigations revealed that for single and bi-layer sensor structures the maximum value of AE sensitivity was obtained for parametr ξmax=∼0.6. For bi-layer structures this sensitivity is lower. However we also found the positions of the maximum values in a function of x design parameter dependently on different values of normalized conductivity of the second film.
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