Abstract
A comprehensive theoretical model of an ultrafast all-optical Boolean XOR gate implemented with a semiconductor optical amplifier (SOA)-assisted Sagnac interferometer is presented. The model accounts for the SOA small signal gain, linewidth enhancement factor and carrier lifetime, the switching pulses energy and width and the Sagnac loop asymmetry. By undertaking a detailed numerical simulation, the influence of these key parameters on the metrics that determine the quality of switching is thoroughly investigated and simple design rules are extracted for their proper selection so as to ensure optimum operation. The obtained results are in good agreement with the published experimental measurements and confirm the feasibility of realizing the gate at 10 Gb/s with fairly high performance. The model can be extended for studying more complex all-optical circuits of enhanced functionality in which the XOR gate is the basic building block.
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