Abstract
Finding DC operating points of nonlinear circuits is an important and difficult task. The Newton-Raphson method adopted in the SPICE-like simulators often fails to converge to a solution. To overcome this convergence problem, homotopy methods have been studied from various viewpoints. However most previous studies are mainly focused on the bipolar transistor circuits and no paper presents the global convergence of the homotopy method for MOS circuits. This paper extends the nonlinear homotopy method to MOS transistor circuits and presents the global convergence theorems of the homotopy method for MOS circuits.
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