Abstract
New low-temperature (T∼200 K) elastic low-energy electron diffraction (ELEED) intensity data obtained for ZnSe films grown epitaxially on GaAs(110) are analyzed using an R-factor methodology. The differences between the measured ELEED intensities for ZnSe(110) and those for GaAs(110) reveal the possibility that these two surfaces may not exhibit comparable atomic geometries. A bond-length-conserving top-layer rotation of the Se species outward and the Zn inward corresponding to ω1=4° provides a description of the measured intensities (Rx =0.22, RI =0.21) comparable to that afforded by the ZnSe(110) analog of the GaAs(110) structure (a relaxed version of an ω1=29° structure, Rx =0.24, RI =0.16). Since GaAs and ZnSe exhibit essentially identical bulk lattice constants, the possibility that their (110) surfaces exhibit different atomic geometries poses a puzzle within the framework of current understanding of this topic.
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