Abstract
We discover the transition phenomenon of two kinds of different resistive switching behaviors in SiOx based Pt/SiOx/Pt devices with different x component. When x < 0.80, the forming/set operations need a current compliance and the reset voltage Vreset is lower than set voltage Vset. However, when x > 0.95, the operations do not need a current compliance and Vreset is higher than Vset. We use the silicon dangling bonds (Si-DBs) percolation model to explain the x dependent transition phenomenon. The microstructural transitions of tetrahedral Si-O configurations and related Si-DBs in as-deposited SiOx films with different x and the hopping conductance of low-resistance-states support our model.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
