Abstract
This contribution highlights how the active device on resistance (R ON ) can play a significant role in the achievable performances from a Doherty Power Amplifier (DPA). Benefits as well as limitations are stressed comparing two DPAs (DPA 1 and DPA 2 ) for X-band applications. Both of them have been realized in the same monolithic technology based on GaAs PHEMT 0.4um power process provided by Selex-SI. Moreover, the DPA 1 has been obtained following the classical design approach, i.e. assuming a constant and fixed swing for the main device output voltage. Conversely, the DPA 2 has been optimized accounting for the linear behavior of the device knee voltage, due to the effect of R ON . From measures an output power at 1dB compression point of about 29dBm, with an associate power gain of 6.5dB, is registered. Finally, DPA 1 has shown an efficiency greater than 38% in 6dB of output power back-off, while an efficiency larger than 42% has been achieved with DPA 2 in the same output back-off range.
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