The waveguide effect of InGaAs quantum wells in a GaAs structure on Si substrate with Ge buffer layer

Abstract

The waveguide effect of InGaAs quantum wells in a GaAs structure grown on a Si substrate with a relaxed Ge buffer layer has been studied. After an excitation power density of 35 kW/cm2 was reached at liquid-nitrogen temperature, several stimulated emission lines were observed in the energy range of 1350–1360 meV.