Abstract

The anti-reflection coating(ARC) based on dielectric nano-particles has been recently proposed as a new way to achieve the low reflectance required for solar cell front surfaces. In this scenario, the Mie modes associated with the dielectric nano-particles are utilized to facilitate photon forward scattering. In this work, versatile designs together with systematically optimized geometry are examined, for the ARCs based on dielectric scatterers. It is found that the Si3N4-TiO2 or SiO2-TiO2 stack is capable of providing low reflectance while maintaining a flat and passivated ARC-semiconductor interface which can be beneficial for reduced interface recombination and prevent V(OC) degradation associated with topography on the active materials. It is also confirmed that the plasmonic nano-particles placed at the front side of solar cells is not a preferred scheme, even with thorough geometrical optimization. At the ultimate design based on mixed graded index(GI) Mie-scattering, the averaged reflectance can be as low as 0.25%. Such a low reflectance is currently only achievable by ultra-long silicon nano-tips, but silicon nano-tips introduce severe surface recombination. On the other hand, the mixed GI Mie design preserves a flat and passivated ARC-silicon interface, with total thickness reduced to 279.8 nm, much thinner than 1.6 μm for silicon nanotips. In addition, the light trapping capability of mixed GI Mie design is much better than silicon nanotips. In fact, when compared to the state-of-art TiO2 light trapping anti-reflection coating, the mixed GI Mie design provides same light trapping capability while providing much lower reflectance.

Highlights

  • Anti-reflection coatings (ARC) based on dielectric nano-particles have drawn considerable attention due to the potential to provide a new way for achieving anti-reflection for solar cell applications [1,2,3,4]

  • The reflectance of mixed graded index (GI) Mie anti-reflection coatings (ARC) is comparable to the silicon nano-tip ARC, which is the lowest reflectance ARC to date

  • The silicon nano-tip ARC suffers from severe surface recombination, ultra-long dimension, poor charge collection, and mediocre light trapping property, while mixed GI Mie ARC does not

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Summary

Introduction

Anti-reflection coatings (ARC) based on dielectric nano-particles have drawn considerable attention due to the potential to provide a new way for achieving anti-reflection for solar cell applications [1,2,3,4]. Proposed ARC based on ultra-long silicon nano-tips can provide ultra-low reflectance, but it leads to severe surface recombination [7]. By proper optimization of the geometrical parameters, the proposed ARC structures can possess combined advantageous features: It can achieve the low reflectance that is comparable to the lowest reflectance ARC to date [7], but without the drawbacks of elevated surface recombination, bulky dimension and poor light trapping. The flat and passivated ARC-silicon interface are maintained for all of the proposed Mie scattering ARCs in this study which is expected to reduce surface/interface recombination, beneficial for higher VOC and JSC

Calculation set-up for cylindrical Mie scattering ARC
TiO2-Si3N4 or TiO2-SiO2 cylindrical dielectric scatterer ARC
Conclusion
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