The variation in optical gap of amorphous In33Se33Sb33 thin films with temperatures of heat treatment

Abstract

Amorphous thin films of the ternary compound In33Se33Sb33 have been produced by a vacuum evaporation technique. The optical gap Egopt of In33Se33Sb33 thin films is measured as a function of temperature of heat treatment. It was found that the optical gap has a higher value than that of the binary compound In50Se50 at the initial stages of heat treatment, but after a particular temperature (423 K) of heat treatment, the value of optical gap decreases appreciably in the case of In33Se33Sb33 thin films, while it increased in the case of In50Se50 thin films.