The validity of the double layer model on the amorphous semiconductor surface including the bulk localized state within the gap

Abstract

Under the two assumptions that the origin of surface states may be different from that of bulk localized states within the gap and the density of surface states is sufficiently high, the validity of the double layer model on the amorphous semiconductor surface is investigated in comparison with the case of a crystal. It is suggested that the criteria concerning the double layer should be determined by the relative value of the surface states to that of bulk localized states. The existence of the double layer can be confirmed when the bulk localized state density n( E f) is smaller than 10 19 cm −3 eV −1. When n( E f) is high at about 10 20 cm −3 eV −1, surface states cannot be distinguished from the localized states within the gap. This double layer model is strongly supported by the results of previous experiments by others who have measured the dependence of the Schottky barrier height on the work function of metal and the dependence of the surface potential on the preparation conditions of a-SiH.