Abstract
A heteroepitaxial structure consisting of 1 ML InAs grown on GaAs(0 0 1) and then capped with 25 Å GaAs was examined by the X-ray standing wave (XSW) method. By monitoring the In L fluorescence while scanning through the GaAs(0 0 4) Bragg reflection, the perpendicular strain within the InAs layer was directly measured to be 7.7%, which is in good agreement with macroscopic elasticity theory (7.3%). We also demonstrate that, combined with the evanescentwave-emission effect, the XSW method can be used to measure the strain-induced displacement of the cap layer in the growth direction.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
