The use of tertiarybutylphosphine and tertiarybutylarsine for the metalorganic molecular beam epitaxy of the In 0.53Ga 0.47As/InP and In 0.48Ga 0.52P/GaAs materials systems

Abstract

This paper describes a study on the use of thermally cracked tertiarybutylphosphine (TBP) and tertiarybutylarsine (TBA) with elemental Ga and In sources for the metalorganic molecular beam epitaxy (MOMBE) growth of the In 0.53 Ga 0.47 As/InP and In 0.48 Ga 0.52 P/GaAs materials systems. Modulated beam mass spectroscopy was used to characterize the thermal decomposition of these Group-V metal alkyls. Results indicate that As 2 and P 2 are the dominant growth species produced when cracker temperatures greater than 700°C are used. These conditions result in high quality epitaxial layers with essentially zero oval defects (less than l/cm 2 ) despite the use of elemental Group-Ill sources. Results of doping and heterointerface studies indicate that these Group-V precursors are suitable replacements for hydride sources. Application of these precursors for device structure growth including heterojunction bipolar transistors (HBTs) and resonant tunneling diodes (RTDs) is also described.