Abstract
The processes of stimulated gas release and gas blister growth were investigated at the interface of 100 nm thick silver films on glass substrates after irradiation by hydrogen ions of 1 MeV energy to fluences of 1 x 1013-1 x 1015 ion cm-2. An interference microscope was used to examine the gas blisters and to measure the blister parameters. The relationship of these processes to the adhesion of a thin film system was established. A method to determine the adhesion and to compute the adhesion characteristics in the film-substrate system is described. The calculated energy of the detachment ranges between 0.06 and 28 J m-2. Based on the results of this study, a series of practical approaches are proposed to measure the adhesion of thin films to substrates with the method of stimulated gas release.
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