The use of silicon PIN-photodiodes as a low-energy photonspectrometer

Abstract

The properties of PIN-photodiodes as an X-ray spectrometer are investigated and discussed. It is found that with these detectors an energy resolution of less than 1.9 keV is found at 22.1 keV photon energy at room temperature. X-ray fluorescence radiation induced in materials (Ag, Au) close to the photodiode also shows up in the energy spectrum. Relative full-energy peak detection efficiencies of more than 95% from the maximum efficiency at 12 V are obtained at reverse bias voltages above 6 V. The advantages such as small size, lack of high voltage power supply and ruggedness together with possible applications are discussed.