The use of silicon-enriched layers as a protection against carburization in high temperature gas-cooled reactors

Abstract

The possibilities of protecting the nickel-based alloy Hastelloy X using silicon-enriched layers are discussed. The silicon-enriched layers are produced using the chemical vapour deposition reaction SiCl 4+2H 2 → Si+4HCl at 1100°C. The correlation between the deposition parameters and the layer structure is defined. Gravimetric carburization measurements can be described very well using a mathematical carburization model.