Abstract

While a variety of tools are used for the design of semiconductor equipment, processes themselves are often the most informative, providing a convenient and direct method for improving both the hardware and the process. Experiments have been done to evaluate the performance of a commercial rapid thermal processing (RTP) instrument. The effects of chamber geometry and optics as well as the time/temperature recipe were probed using rapid thermal oxidation (RTO), sintering of tungsten suicide and molybdenum silicide, and partial activation of implanted ions. We show how sheet resistance and film thickness maps can be used to determine the dynamic and static temperature uniformity.

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