Abstract
This work reports on the use of sulfur monochloride, , as a dopant for n+‐layers in gallium arsenide. This compound was chosen for its ready availability, convenient vapor pressure, and rapid breakdown at growth temperatures. Our results indicate that its use is beneficial for both high doping and good morphology in polycrystalline gallium arsenide solar cells, made on foreign (molybdenum) substrates.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
