Abstract
Significant changes in microstructure, surface structure, and alloy composition have been observed in GaInP with the addition of nitrogen. These effects occur due to surface changes induced by small concentrations of nitrogen. Transmission electron microscopy and photoluminescence experiments indicate that the use of the surfactant N nearly eliminates the CuPtB ordered structure typically seen in organometallic vapor phase epitaxially grown Ga0.5In0.5P lattice matched to GaAs. In situ surface photoabsorption measurements show a large change in the surface structure indicating that N reduces the concentration of P dimers on the surface, decreasing the driving force for ordering. Nitrogen also has a significant effect on the Ga/In ratio in the bulk. The indium content in the solid is decreased by 71% with a DMHy/III ratio of 60 (DMHy—1,1 dimethyl hydrazine). Nitrogen roughens the surface causing the formation of hillocks and small rectangular features that can be up to 50 nm tall.
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