Abstract
The synthesis methods and properties of catalyst-free III–V nanowires with molecularbeam epitaxy (MBE) are reviewed. The two main techniques are selective-areaepitaxy (SAE) and gallium-assisted synthesis. The excellent structure and ultra-high puritycharacteristics of the grown nanowires are presented by Raman and photoluminescencespectroscopy.
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Schedule a callMore From: Journal of physics. Condensed matter : an Institute of Physics journal
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