The use of liquid helium-3 to obtain temperatures down to 0·3° K

Abstract

Epitaxial Chemical Vapor Deposition growth of graphene on silicon carbide offers the maturity and reliability expected for large-scale fabrication of graphene-based devices. In particular, the ultimate challenge of graphene synthesis on SiC, i.e. quasi-free-standing monolayer graphene which comes through hydrogen atom intercalation of the sole buffer layer grown on the Si-face of SiC, offers high carrier mobility (as high as 6600 [cm2/Vs]) and electrical stability throughout the device processing cycle. In this report, we present extensive statistics of the electrical properties of QFS-monolayer graphene grown on 4H(0001) and 6H(0001) semi-insulating 10 mm × 10 mm substrates, being a result of 110 individual processes. The adopted explanation for the origin of the as-grown doping level in epitaxial graphene based on the spontaneous polarization of hexagonal SiC and its most up-to-date values is reaffirmed. We introduce the issue of the step-edge-induced offset voltage radial dependence and confront it with the morphological analysis of the average step edge height and terrace width, all related to the place of origin of a specific sample within a 4-inch SiC wafer. Finally, we conclude that within the step edge area QFS-monolayer graphene is statistically nearly half as resistive as the previously reported QFS-bilayer graphene.