Abstract
The article describes research into the use of acoustic emission elastic waves (AE) for diagnosing insulated-gated bipolar transistors (IGBTs). Currently used in many modern shipboard power electronic systems, IGBTs are crucial components required to operate with extreme reliability. The acoustic emission elastic waves method was used to determine the acoustic signals of switching transistor and can be used to monitor early stages of damage. Transistor diagnostics makes use of selected frequency descriptors of AE and appropriate signal analysis.
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