Abstract
The ultra-low-k dielectric material replacing the conventional SiO2 dielectric medium in coupled multilayer graphene nanoribbon (MLGNR) interconnects is presented. An equivalent distributed transmission line model of coupled MLGNR interconnects is established to derive the analytical expressions of crosstalk delay, transfer gain, and noise output for 7.5 nm technology node at global level, which take the in-phase and out-of-phase crosstalk into account. The results show that by replacing the SiO2 dielectric mediums with the nanoglass, the maximum reduction of delay time and peak noise voltage are 25.202 ns and 0.102 V for an interconnect length of 3000 µm, respectively. It is demonstrated that the ultra-low-k dielectric materials can significantly reduce delay time and crosstalk noise and increase transfer gain compared with the conventional SiO2 dielectric medium. Moreover, it is found that the coupled MLGNR interconnect under out-of-phase mode has a larger crosstalk delay and a lesser transfer gain than that under in-phase mode, and the peak noise voltage increases with the increase of the coupled MLGNR interconnect length. The results presented in this paper would be useful to aid in the enhancement of performance of on-chip interconnects and provide guidelines for signal characteristic analysis of MLGNR interconnects.
Highlights
As the feature size of very large-scale integrated (VLSI) circuits is scaled down to the nanometer order, various performance degradation and stability problems on the conventional Cu interconnects have emerged in recent years [1,2,3]
The results presented in this paper would be useful to aid in the enhancement of performance of on-chip interconnects and provide guidelines for signal characteristic analysis of multilayer Graphene nanoribbon (GNR) (MLGNR) interconnects
A typical geometry of two-line coupled MLGNR interconnects placed above the ground plane and surrounded by a dielectric medium is exhibited in Figure 1, where the common SiO2 dielectric material is replaced by the ultra-low-k dielectric material
Summary
As the feature size of very large-scale integrated (VLSI) circuits is scaled down to the nanometer order, various performance degradation and stability problems on the conventional Cu interconnects have emerged in recent years [1,2,3]. In reference [1], Zhao et al analyzed and compared the performance difference of crosstalk noise and crosstalk delay between coupled MLGNR and Cu interconnects, considering the impact of coupling capacitance. It is necessary to investigate the effects of the ultra-low-k dielectric materials on the crosstalk noise and transfer gain of on-chip interconnects. To the best of our knowledge, there is no research to propose the analytical model of coupled MLGNR interconnects, considering the impact of the ultra-low-k dielectric materials. In this paper, an analytical model for crosstalk delay, noise output, and frequency response of coupled MLGNR interconnects with different dielectric materials is proposed. Nanoglass was adopted as the ultra-low-k dielectric constant material for analysis of performance of on-chip interconnect compared with the conventional
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