Abstract
The memory elements on the basis of nonideal heterojunction photoelectric characteristics have been researched. The sensitometry concepts application to the solid-state memory elements has allowed receiving universal expression for a sensor characteristic curve which coordinate well with the experimental data and can be used at similar devices sensitometric characteristics research. The conclusion that the sensor on the basis of nonideal heterojunction can be characterized with the help of classical sensitometric characteristics developed for photographic materials is made.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
