Abstract
We have irradiated relatively pure n-type and p-type epitaxial GaAs layers with 1 MeV electrons and determined the 296 K Fermi energy ϵ F as a function of fluence φ by using Hall-effect measurements. For the p-type samples, ϵ f begins at from E v +0.25 to E v +0.45 eV, and eventually moves up to about E V +0.5eV at high fluence. For the n-type samples, ϵ F begins at about E c −0.2 eV, typically, then drops precipitously to the range E V +0.25 to E V +0.5eV, and eventually ends up near the latter value, E V +0.5 eV, often following one of the ϵ F vs φ curves for the p-type samples. Significant 296 K annealing is sometimes observed for the p-type samples. We show that the 1 MeV acceptor production rate in n-type GaAs is about 5 cm −1, but that the rate in p-type material is much lower, probably due to room-temperature annealing. All results are consistent with a Ga-sublattice-damage model for the main acceptor production, although other models are also possible.
Published Version
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