Abstract
Copper as one of the major electronic metals will experience electric current stressing during electronics application. The study comprehensively investigated microhardness and electrical resistivity variations of copper under current stressing at current densities 1.4 x 104 and 1.7 × 104 A/cm2 for up to 8 h. The variations in these properties were correlated with dislocation density and twin fraction. The dislocation density and twin fraction were estimated, respectively, with high resolution transmission electron microscope and Electron Backscatter Diffraction. The twin boundary acts as obstacle to dislocation movement as revealed by high resolution transmission electron microscopy. The twin boundary predominates over dislocation in governing the microhardness and electrical resistivity of copper under current stressing.
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