Abstract
For the uniform donor distribution we have theoretically investigated the influence of the separation between the adjacent two doping layers on the electronic structure of the triple Si δ-doped GaAs, at T=0 K. To find the subband structure of the triple δ-doped quantum well we have solved self-consistently both Schrodinger and Poisson equations. From our calculations, we have seen that the electronic properties of triple Si δ-doped GaAs structure depend strongly on the spacer thickness between the adjacent two doping layers. In this study, we can estimate that the mobility in closely spaced triple δ-doped GaAs structures is very high compared to single δ-doped structures because of the overlap between the electron wave function and the ionized scattering centres in single δ-doped structures.
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