The triboelectric microplasma transistor of monolayer graphene with a reversible oxygen ion floating gate

Abstract

Using the adsorbates as a floating gate on graphene is an importance strategy for developing novel field effect transistor. However, O 2 , as the most common and active gas in air, has not been used as floating gate of graphene transistor, since its lowest unoccupied molecular orbital (LUMO) is higher than the Fermi level of graphene, blocking the formation of O 2 − ions. Here, the graphene transistor using O 2 − as a reversible floating ion gate has been reported by introducing triboelectric microplasma to activate the adsorption path, where O 2 molecule is activated into O 2 − ion before its adsorption. The adsorbed O 2 − with a concentration of 3.45 × 10 12 cm −2 has been realized in the experiment, acting as a negative floating gate to move down Fermi level and produce p-type doping of graphene. The floating gate of O 2 − is reversible, which can be erased by heating and the desorption barrier is calculated as 198 meV. The ab initio simulation shows that, the LUMO level of the adsorbed O 2 − is lowered to 0.85 eV below the Fermi level of graphene, which overcomes the barrier in the adsorption path with microplasma. The experiments results have demostrated that the triboelectric microplasma technology has potential applications in developing novel electronic and optoelectronic devices. This paper, the adsorption of O 2 − on monolayer graphene is achieved by introducing the triboelectric microplasma to generate a novel adsorption path, acting as a negative floating gate to move down Fermi level and produce p-type doping of graphene. The floating gate of O 2 − is reversible, which can be erased by heating and the desorption barrier is calculated as 198 meV. The ab initio simulation shows that, the LUMO level of the adsorbed O 2 − is lowered to 0.85 eV below the Fermi level of graphene, which overcomes the barrier in the adsorption path with microplasma. The technology has potential applications in developing novel electronic and optoelectronic devices of graphene. • The graphene transistor using O 2 − as a reversible floating ion gate has been reported by introducing triboelectric microplasma to activate the adsorption path. • The adsorbed O 2 − act as a negative floating gate to move down Fermi level and produce p-type doping of graphene. • The floating gate of O 2 − is reversible, which can be erased by heating and the desorption barrier is calculated as 198 meV. • The ab initio simulation shows that, the LUMO level is lowered to 0.85 eV below the Fermi level of graphene, which overcomes the barrier in the adsorption path with microplasma. • The technology has potential applications in developing graphene-based novel electronic and optoelectronic devices.