Abstract
We measured the trend of the electron temperature in the SiH4/H2 plasma by monitoring the optical emission intensity ratio between Si ∗ (288 nm) and SiH ∗ (414 nm) and estimated the averaged electron density through plasma impedance measurement with a current–voltage monitor (ENI.INC, V–I probe). The plasma was generated between parallel plates by using VHF (40.68 MHz) power for Plasma Enhanced Chemical Vapor Deposition (PECVD). For various pressures and input powers, we analyzed the relation between the plasma parameters and the characteristics of the H 2-diluted silane plasma. From the analysis, the optimization of the μc-Si:H CVD process was suggested.
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