Abstract
The historical and technological development of the ubiquitous trench power MOSFET (or vertical trench VDMOS) is described. Overcoming the deficiencies of VMOS and planar VDMOS, trench VDMOS innovations include pioneering efforts in reactive ion etching and oxidation of the silicon trench gate, polysilicon fill and recessed etchback, unit cell and distributed voltage clamping to protect the trench gate, and scaling active cells to high densities using deep submicron fabrication. Thereafter, gate–drain engineered trench VDMOS improved high-frequency switching capability with lower gate charge utilizing nonuniform gate oxides, field shaping, and charge balancing (superjunction, RSO) methods. The recent adaptation of trench gates in wide bandgap unipolar devices is also described.
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