Abstract
A new rectifier structure, called Trench MOS Barrier Schottky (TMBS) rectifier has been modeled and fabricated with excellent trade-off characteristics. Two-dimensional numerical simulations have demonstrated coupling between the charge in the N/sup -/ drift region and the metal on the trench sidewalls resulting in an improved electric field distribution. For epitaxial layer doping of 1/spl times/10/sup 17/ cm/sup -3/, simulations show that breakdown voltages of three times the plane parallel breakdown can be achieved with low leakage current. The measured forward drops for the 0.5 /spl mu/m devices at 60 A/cm/sup 2/ and 300 A/cm/sup 2/ were 0.2 V and 0.28 V respectively. Due to smaller drift region resistances, TMBS rectifiers can be operated at large current densities (/spl ap/300 A/cm/sup 2/) resulting in small device sizes. >
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