Abstract
Manganese-doped zinc oxide (Mn-doped ZnO) thin films were prepared using chemical bath deposition (CBD), and the impacts of the manganese dopant concentration on the structure, electrical resistivity, optical transmission, and magnetic properties were investigated using x-ray diffractometry, Hall-effect measurements, ultraviolet–visible–near-infrared (UV–Vis–IR) spectrophotometry, and vibrating sample magnetometry (VSM), respectively. The concentration of the manganese dopant in the ZnO thin film critically impacted the resulting properties, and the 4.0 at.% Mn-doped ZnO film had a resistivity of 5.8 × 10−2 Ωcm, transmittance of 75.6% in the visible light range, and bandgap of 3.30 eV when the film was annealed at 600°C in an Ar + H2 atmosphere. Annealing the film could enhance its magnetic properties such that the film had a saturation magnetization of 21.0 emu/cm3 and a coercivity of 45.7 Oe after annealing at 600°C. Because of these electrical, optical, and magnetic properties, Mn-doped thin films are promising for use in spintronic devices.
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