Abstract
2 mm thick silicon wafers, implanted with 4.8 MeV alpha -particles are studied by means of transmission section topography and additionally by Lang and double-crystal methods. It was found that all three methods produced a negligible contrast in the symmetric transmission reflection apart from some fragments of the implanted area's boundaries. The interference fringes were observed in the case of asymmetric reflections. The asymmetric section topographs revealed distinct interference fringes, which cannot be explained in terms of simple bicrystal models. In particular, the curvature of these fringes may be interpreted as being due to the change in the implanted ion dose along the beam intersecting the crystal. Some features of the fringe pattern were reproduced by numerical integration of Takagi-Taupin equations.
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