Abstract
Ru(dcbpyH 2) 2(NCS) 2 molecules have specific binding sites for TiO 2 and Au surfaces and a large dipole moment what makes them attractive for engineering of Schottky junctions. The rectification of the junction conditioned with a monolayer of Ru(dcbpyH 2) 2(NCS) 2 molecules increased by several orders of magnitude in comparison to the bare TiO 2/Au junction. The influence of (i) trap-assisted tunneling, of (ii) specific interaction of Ru(dcbpyH 2) 2(NCS) 2 molecules with oxygen vacancies at the TiO 2 surface and of (iii) the dipole moment of the Ru(dcbpyH 2) 2(NCS) 2 molecules on the activation energy of the diode saturation current was demonstrated. The estimated projected dipole moment of one Ru(dcbpyH 2) 2(NCS) 2 molecule amounted to about 5 D.
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