Abstract
The anomalous Hall effect measurements are used to probe the magnetization reversal of terbium iron garnet (TbIG) thin films at different temperatures. The compensation temperature (Tcomp) of TbIG thin films is revealed, and the film thickness effect on the Tcomp is studied. The results indicate a rise of Tcomp along with decreasing film thickness. We postulate two possible origins for the observed behavior, namely interfacial element diffusion and strain effects between TbIG films and Gd3Ga5O12 substrates. The results have implications for the study of spintronic devices based on ultrathin rare-earth iron garnet thin films.
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