Abstract
Single crystals of Cu 1-x Ga x Cr 2 Se 4 have been prepared using a chemical vapor method. The absolute thermoelectric power S and the electrical resistivity p of single crystals with compositions x = 0.036, 0.158, 0.374, 0.394, have been measured in the temperature range from 5 to 400K. All compounds are p-type metallic conductors with the residual resistance increasing with increasing gallium concentration. The temperature dependence of the resistivity is almost constant for temperatures T < T c and increases close to the Curie temperature T c , indicating a spin scattering contribution. A broad hump AS(T) which goes to zero close to T c apparently is superimposed on a linear diffusion thermopower, suggesting magnon drag.
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