Abstract
Both hot carrier photoluminescence and picosecond time-resolved luminescence demonstrate that photoinduced carrier relaxation processes in In x Ga 1− x As GaAs strained single quantum well structures are significantly slower than in the bulk and depend on the alloy composition of the In xGa 1−xAs. These results are interpreted in terms of strain induced confinement of the LO-phonon as a possible source of the reduced electron-phonon interaction.
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