Abstract
The thermal stability of AlN powders and thin films has been investigated using reflection high-energy electron diffraction (RHEED) and X-ray diffraction. AlN powder was treated thermally and chemically to assess the oxidation resistance of this compound and to identify the phases formed. The results show that AlN is stable up to 1000° C in air and remains stable up to 1400° Cin vacuo. γ-AIOOH is formed when AlN is treated with water at 100° C but AlN does not react readily with atmospheric moisture at room temperature. The thermal stability of thin films of AlN on GaAs has been evaluated at temperatures between 900 and 1100° C in a nitrogen atomosphere. It was found that AlN did not oxidize under these conditions. Pure AlN is a suitable encapsulant for GaAs at high annealing temperatures in an inert atmosphere.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
