Abstract
Context. Nowadays the research and development of heterojunctions are carried out to search new metal-gallium arsenide compositions, the development of technological regimes which could ensure the microwave devices with Schottky barriers parameters reproducibility. Comparing to gold, silver has a large thermal and electrical conductivity, a relatively small diffusion coefficient to gallium arsenide, which makes it possible to reduce the transition layer thickness. The transition to silver-based metallization should improve the products technical characteristics. The technological regimes development for manufacturing improved silver-based heterojunctions to GaAs is relevant from scientific and practical points of view. Objective. The goal of the work is to determine the heat treatment influence on real current-voltage characteristics and the injection coefficient value of the Ag/n-n+GaAs heterojunction. Method. The heterojunctions manufacturing method is vacuum thermal evaporation. The calculation of the heterojunction parameters was made by the current-voltage characteristics method. Results. The GaAs-substrate chemical treatment regime is recommended. The heat treatment effect on the Ag/n-n+GaAs heterojunctions parameters and characteristics is studied. The barrier height influence on the injection coefficient value was investigated. Various methods for determining the Schottky barrier height and the nonideality factor for the current-voltage characteristics have been examined and tested. Conclusions. It is established that the annealing temperature increase up to 803 K gives the highest barrier height for the Ag/n-n+GaAs heterojunction with a donor density of ND=2 1016 cm–3 into epitaxial layer. It has been established that the most accurate method for the heterojunction parameters determining using the current-voltage characteristic is the direct approximation method, which takes into account the effect of the series resistance in determining the nonideality factor and the Schottky barrier height. The calculated injection coefficients for heterojunctions with different Schottky barrier heights, obtained at different annealing temperatures, have very small values, therefore, hole injection can be neglected.
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