The Thermal Model for Carrier Hopping and Retrapping in Self-Organized InAs Quantum Dot Heterostructure

Abstract

A steady‐state thermal model based on a set of rate equations is proposed in this article. The carrier dynamics of the main components in quantum dot (QD) systems, including the intersublevels in InAs QDs, the wetting layer, and the GaAs barriers, are all described by the equations. The QD sizes distribution, carrier capture, carrier relaxation, thermal escape and retrapping are all taken into account in this model. Two InAs QD samples with different size distributions and uniformities were grown. The measured temperature dependent photoluminescence (PL) spectra of the samples are consistent with the computational results. Furthermore, we also analyze the relationships between the carrier dynamics and the full width at half maximum (FWHM) for the samples.