Abstract
In this study we aimed to research the effect of thermal annealing on thermal equilibrium defect density. In order to realize that goal Schottky diodes of Au/a-Si:H/a-Si:H(n-type)/Cr structure were fabricated. The gap states in the energy range of 0.35 - 0.50 eV were found by Michelson's drive level profiling method before and after thermal annealing processes in the temperature range 100 - C. Results about the thermal annealing effect on the density of states distribution were interpreted in terms of the defect compensation model of doping.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
