The theory of photoconductivity in defect insulators containing discrete trap levels

Abstract

A formal approach to the basic photoconductivity process is presented for a photoconductor with an energy gap containing many discrete trap levels, with a random variation in the energy densities and the electron and hole capture cross sections for the traps. The problem is formulated in terms of two algebraic equations: the statement of steady-state charge neutrality and the steady-state rate equation for all the trapping levels in the energy gap.