Abstract
We investigate the drift and Hall mobility of a quasi-two-dimensional electron gas (Q2DEG) confined in wurtzite AlGaN/GaN/AlGaN square quantum wells (QWs). We use the variational-subband-wave-function model for carrier confinement and assume that the electrons only occupy the lowest subband. We take into consideration the most important scattering mechanisms such as the edge and charged dislocation, remote and background impurity, interface roughness, acoustic phonon via deformation potential and piezoelectric field, and polar LO phonon. Assuming the scattering by acoustic phonons to be quasi-elastic and using the iterative method for inelastic regime, where the LO phonon scattering becomes important, we study the dependence of the mobility on the temperature T, carrier density $$N_{\mathrm {s}}$$ , and QW width L.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
