Abstract
The tensoresistance at the uniaxial pressure along the crystallographic direction [100] for n-Si single crystals, which were irradiated by the different doses of gamma quants was investigated. On the basis of the theory of anisotropic scattering and experimental data of the tensoresistance the dependences of the parameter of mobility anisotropy on the uniaxial pressure for the data of single crystals are obtained. It has been shown that for unirradiated n-Si single crystals, the parameter of mobility anisotropy does not depend on uniaxial pressure since the alloying impurities of phosphorus will be completely ionized at T=77 K. For the gamma - irradiated n-Si single crystals the parameter of mobility anisotropy will decrease with an increase in exposure dose by reducing the screening effect. In this case, it is necessary to take into account the mechanisms of electron scattering on the impurity ions, impurity complexes, which consist of several ions of the impurity and on the fluctuation potential, which leads to the appearance of gradients of resistivity. The changing of relative contribution of these the scattering mechanismsat at the uniaxial pressure determines the obtained dependences of the parameter of mobility anisotropy and the tensoelectric properties of gamma-irradiated n-Si single crystals.
Highlights
The main materials for the production of the widest range of electronic devices and sensors of modern micro and nanoelectronics are many-valley semiconductors, among which silicon plays a leading role due to its unique properties, virtually unlimited natural resources, commercial availability, and growing technologies [14]
The study of the impact of radiation on various physical properties of silicon is important from the point of view of studying the term of operation and changes of the performance of devices and measuring equipment manufactured on its basis, used in atomic reactors, accelerators of nuclear particles, aerospace industry, space, scientific research [6,7,8,9,10]
There is a significant demand for the radiation resistant pressure sensors for such areas of science and technology, whose manufacture in economically developed countries is about 60% among all other sensors of physical quantities. It is interesting both in the theoretical and practical terms to investigate the mechanisms of scattering of charge carriers in deformed silicon single crystals with radiation defects
Summary
The main materials for the production of the widest range of electronic devices and sensors of modern micro and nanoelectronics are many-valley semiconductors, among which silicon plays a leading role due to its unique properties, virtually unlimited natural resources, commercial availability, and growing technologies [14]. The change in the electrophysical properties of silicon single crystals in radiation irradiation is mainly determined by secondary defects - complexes of vacancies and interstitial atoms with each other, with atomic impurities (A-, E-centers, divacancies, and other defects) [5] Such defects, as a rule, create deep energy levels in the band gap of silicon. There is a significant demand for the radiation resistant pressure sensors for such areas of science and technology, whose manufacture in economically developed countries is about 60% among all other sensors of physical quantities It is interesting both in the theoretical and practical terms to investigate the mechanisms of scattering of charge carriers in deformed silicon single crystals with radiation defects. This, in turn, can lead to a change in the scattering conditions of charge carriers This fact must be taken into account when analyzing kinetic effects in deformed single crystals of semiconductors with deep energy levels.
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
