Abstract

Two new ternary manganese bismuthides have been synthesized and their structures established based on single-crystal X-ray diffraction methods. Sr2MnBi2 crystallizes in the orthorhombic space group Pnma (a = 16.200(9) Å, b = 14.767(8) Å, c = 8.438(5) Å, V = 2018(2) Å3; Z = 12; Pearson index oP60) and is isostructural to the antimonide Sr2MnSb2. The crystal structure contains corrugated layers of corner- and edge-shared [MnBi4] tetrahedra and Sr atoms enclosed between these layers. Electronic structure calculations suggest that Sr2MnBi2 is a magnetic semiconductor possessing Mn2+ (high-spin d5) ions, and its structure can be rationalized within the Zintl concept as [Sr2+]2[Mn2+][Bi3-]2. The temperature dependence of the resistivity shows behavior consistent with a degenerate semiconductor/poor metal, and magnetic susceptibility measurements reveal a high degree of frustration resulting from the two-dimensional nature of the structure. The compositionally similar Ba2Mn1-xBi2 (x ≈ 0.15) crystallizes in a very different structure (space group Imma, a = 25.597(8) Å, b = 25.667(4) Å, c = 17.128(3) Å, V = 11253(4) Å3; Z = 64; Pearson index oI316) with its own structure type. The complex structure boasts Mn atoms in a variety of coordination environments and can be viewed as consisting of two interpenetrating 3D frameworks, linked by Bi-Bi bonds. Ba2Mn1-xBi2 can be regarded as a highly reduced compound with anticipated metallic behavior.

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