The temperature-dependent dielectric properties of the Au/ZnO-PVA/n-Si structure

Abstract

In this work, the temperature-dependent (80–360 K) dielectric properties of the Au/ZnO-PVA/n-Si structure was investigated employing capacitance-voltage (C–V) and conductance-voltage (G/ω-V) experiments at 1 MHz. The results indicate that all electrical and dielectric variables in these structures are forcefully dependent on temperature. Also, using the interlayer ZnO-PVA nanocomposite has caused changes to these parameters. Because of the presence of series resistance, the amount of C and G/ω increases as the temperature rises. The values of EF increase with temperature, whereas the values of barrier height decrease from 1.045 eV to 0.943 eV, and the value of α extract from ΦB-T plot is obtained −3.5 × 10−4 eV/K that is approximately equal to the silicon temperature coefficient. The value of activation energy is obtained 0.04 eV which is a modest amount obtained from the conduction procedure's contribution to the boundary grains.