Abstract
It is invited statistical explanation of the frequency and temperature dependence of the absorption coefficients of semiconductors on the long-wave edge of the fundamental absorption. With the help of mathematical modeling, it shows that the thermal broadening of the energy states of the conduction band and the discrete states in the band gap can cause long-wave decline according to the Urbach rule.
Highlights
In [1], with the help of mathematical modeling, it has shown that the experimentally determined continuum thermodynamic density of surface states at low temperatures, will turn to the discrete spectrum of the surface states. It is shown changing the width of the band gap with increasing temperature as explained by thermal broadening of the energy states of the conduction band and valence band of the semiconductor [2]
The light absorption coefficient on the long edge of the fundamental absorption is often described by the Urbach rule [6] [7]
At a temperature T = 300 K, the relative share of localized states, and in the empty, is less than 1%. It follows that the density of states in the band gap below the bottom of the conduction band is completely determined by the states will come from the conduction band
Summary
In [1], with the help of mathematical modeling, it has shown that the experimentally determined continuum thermodynamic density of surface states at low temperatures, will turn to the discrete spectrum of the surface states It is shown changing the width of the band gap with increasing temperature as explained by thermal broadening of the energy states of the conduction band and valence band of the semiconductor [2]. The aim of this work is to study the influence of the temperature dependence of the thermodynamic density of states by a factor of light absorption (Urbach rule) on the long edge of the fundamental absorption
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