Abstract
Infra-red enhancement of electroluminescence in single crystals of zinc sulphide, previously studied only at room temperature, is investigated over the temperature range 97-383°K. At low temperatures normal electroluminescence is strongly limited by space charge due to trapped carriers in the bulk crystal but the latter can be removed by infra-red irradiation which then enhances electroluminescence giving similar characteristics to those found at room temperature. Above room temperature thermal generation of mobile positive holes adds to the enhancement process produced by infra-red liberation of holes. The Schottky barrier model, previously developed to explain the room-temperature effects, is successfully applied to the behaviour at other temperatures.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
